THE EFFECT OF HEAT TREATMENT AND LASER EXPOSURE ON THE OXIDATION OF THE SURFACE OF THE SILICON T.S. Kosherov 1 , G.I. Zhanbekova 2 1
Dr. Sci. (Physics - Math.), Professor,
2
PhD student
1
Kazakh Academy of Transport and Communication named after by M. Tynyshpaev, Almaty, Kazakhstan,
2
Kazakh National Pedagogical University named after by Abai, Almaty, Kazakhstan
email: gulnura08@list.ru
The processes of silicon wafer formation of its oxides at different temperatures and annealing time and
subsequent continuous exposure to the laser beam were investigated. Laser annealing of surface layers is one of
the most effective methods of such materials as
Si . As the advantages of such processing methods is the
possibility of annealing in atmospheric conditions. The conditions for the appearance of its oxides on the surface
of the sample are established. Continuous laser irradiation after thermal ignition of the sample affects the oxidation
processes. The observed increase
2
SiO in the time of thermal ignition temperature, as well as the subsequent laser
irradiation is a consequence of the increase in the oxidation rate, and its increase is associated with the
decomposition
2
SiO and subsequent evaporation of the products of its reproduction.
Key words: oxide formation, oxygen atoms, surface morphology, pyramidal projections
