Қазан–қараша–желтоқсан 30 желтоқсан 2015 ж. 1996 жылдан бастап шығады Жылына 4 рет шығады
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- У Н И В Е Р С И Т Е Т А ISSN 0142-0843 ФИЗИКА сериясы № 4(80)/2015
- Карагандинский государственный университет имени академика Е.А.Букетова
- Е.К.КУБЕЕВ, академик МАН ВШ, д-р юрид. наук, профессор
- МАЗМҰНЫ СОДЕРЖАНИЕ КОНДЕНСАЦИЯЛАНҒАН КҮЙДІҢ ФИЗИКАСЫ
- ЖЫЛУ ФИЗИКАСЫ ЖƏНЕ ТЕОРИЯЛЫҚ ЖЫЛУ ТЕХНИКАСЫ ТЕПЛОФИЗИКА И ТЕОРЕТИЧЕСКАЯ ТЕПЛОТЕХНИКА
- АСПАПТАР ЖƏНЕ ЭКСПЕРИМЕНТ ТЕХНИКАСЫ ПРИБОРЫ И ТЕХНИКА ЭКСПЕРИМЕНТА
- ТЕХНИКАЛЫҚ ФИЗИКА
- ФИЗИКАНЫ ОҚЫТУ ƏДІСТЕМЕСІ МЕТОДИКА ПРЕПОДАВАНИЯ ФИЗИКИ
- КОНДЕНСАЦИЯЛАНҒАН КҮЙДІҢ ФИЗИКАСЫ ФИЗИКА КОНДЕНСИРОВАННОГО СОСТОЯНИЯ
- Electronic mechanisms of instability in semiconductor structures
| Қ АР АҒ АН Д Ы У Н И В Е Р С И Т Е Т I Н I Ң ÕÀÁÀÐØÛÑÛ ÂÅÑÒÍÈÊ К АР АГ АН Д И Н С К О Г О У Н И В Е Р С И Т Е Т А ISSN 0142-0843 ФИЗИКА сериясы № 4(80)/2015 Серия ФИЗИКА Қазан–қараша–желтоқсан 30 желтоқсан 2015 ж. 1996 жылдан бастап шығады Жылына 4 рет шығады Октябрь–ноябрь–декабрь 30 декабря 2015 г. Издается с 1996 года Выходит 4 раза в год
Собственник РГП Карагандинский государственный университет имени академика Е.А.Букетова Бас редакторы — Главный редактор Е.К.КУБЕЕВ, академик МАН ВШ, д-р юрид. наук, профессор Зам. главного редактора Х.Б.Омаров, д-р техн. наук Ответственный секретарь Г.Ю.Аманбаева, д-р филол. наук Серияның редакция алқасы — Редакционная коллегия серии К.К.Кусаиынов, редактор д-р техн. наук; Т.А.Кокетайтеги, д-р физ.-мат. наук; Н.Х.Ибраев, д-р физ.-мат. наук; А.О.Саулебеков, д-р физ.-мат. наук; К.М.Арынгазин, д-р пед. наук; И.В.Брейдо, д-р техн. наук; Митко Стоев, д-р PhD (Болгария); С.Д.Джуманов, д-р физ.-мат. наук (Узбекистан); М.М.Кидибаев, д-р физ.-мат. наук (Кыргызстан); З.Ж.Жанабаев, д-р физ.-мат. наук; Г.В.Климушева, д-р физ.-мат. наук (Украина); С.Е.Кумеков, д-р физ.-мат. наук; В.М.Лисицын, д-р физ.-мат. наук (Россия); И.Н.Огородников, д-р физ.-мат. наук (Россия); Г.И.Пилипенко, д-р физ.-мат. наук (Россия); С.В.Плотников, д-р физ.-мат. наук; А.Ж.Турмухамбетов, д-р физ.-мат. наук; К.Ш.Шункеев, д-р физ.-мат. наук; Л.В.Чиркова, ответственный секретарь
канд. техн. наук Адрес редакции: 100028, г. Караганда, ул. Университетская, 28 Тел.: (7212) 77-03-69 (внутр. 1026); факс: (7212) 77-03-84. E-mail: vestnick_kargu@ksu.kz. Сайт: vestnik.ksu.kz
Редактор И.Д.Рожнова Редакторы Ж.Т.Нұрмұханова Техн. редактор Д.Н.Муртазина Издательство Карагандинского государственного университета им. Е.А.Букетова 100012, г. Караганда, ул. Гоголя, 38, тел., факс: (7212) 51-38-20 e-mail: izd_kargu@mail.ru
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Отпечатано в типографии издательства КарГУ им. Е.А.Букетова © Карагандинский государственный университет, 2015 Зарегистрирован Министерством культуры и информации Республики Казахстан. Регистрационное свидетельство № 13111–Ж от 23.10.2012 г.
2 Вестник Карагандинского университета
Шалаөткізгіштердегі тұрақсыздық жəне
фазалық көшудегі ұқсастық ............................... 4
Chirkova L.V., Ermaganbetov K.T., Arinova E.T. Electronic mechanisms of instability in semicon- ductor structures .................................................... 4
рицасы негізінде барьердің салыстырмалы биіктігі h b = 3 тең асқын өткізгіш туннельдік ауысымның вольтамперлік сипаттамасын есептеу туралы .................................................... 12
амперной характеристики сверхпроводящего туннельного перехода на основе матрицы рассеяния при относительной высоте барьера
= 3 ..................................................................... 12
Al-0,5%Zr қорытпаларының электр кедергісі- не күйдірудің əсері ............................................. 19
Smagulov D.U., Belov N.A., Dostayeva A.M. Roasting effect on the electrical resistivity of the Al-0,5%Zr alloys ................................................... 19
Гученко С.А., Юров В.М. Қоспалы болат қабыршақтарының тотығу тұрақтылығы жəне қызуға төзімділігі................................................ 24
Laurinas V.Ch., Syzdykova A.Sh., Eremin E.N., Guchenko S.A., Yurov V.M. High-temperature strength and corrosion resistance of alloy steel coatings ................................................................. 24
ЖƏНЕ ТЕОРИЯЛЫҚ ЖЫЛУ ТЕХНИКАСЫ
И ТЕОРЕТИЧЕСКАЯ ТЕПЛОТЕХНИКА Бакланов А.Е., Григорьева С.В., Яковлев А.Н. Математикалық модельдеудің жылу массасын тасымалдау жүйесіндегі жоғарғы қуатты жарық диодының бөлінуі ................................... 31
Математическое моделирование тепломассо- переноса в системе теплоотвода для свето- диода высокой мощности ................................... 31
мерденова К.М., Оспанова Д.А., Ахмадиев Б.А., Саденова К.К. U-тəрізді жер асты жылу- алмастырғыштары маңындағы темпера-
тураның өзгерісін зерттеу .................................. 39
Shuyushbayeva N.N., Kussaiynov K., Stoev M., Shaimerdenova K.M., Ospanova D.A., Akhma- diev B.A., Sadenova K.K. Study of regularities of changes in the temperature near the U-shaped ground heat exchangers ......................................... 39
ТЕХНИКАСЫ
ЭКСПЕРИМЕНТА Зейниденов А.К., Ибраев Н.Х., Айтбаева Ж.М. Анодтау əдісімен наноқұрылымдық кеуекті оксид алюминийді алуға арналған техникасын жəне əдісін əзірлеу.............................................. 43
Разработка техники и методики получения наноструктурированного пористого оксида алюминия методом анодного окисления ........... 43
Аманжолова Г.С. Кеуекті титан диоксидін синтездеу үшін магнетронды тозандандыру əдісімен титан қабыршақтарын алу .................. 48
Ибраев Н.Х., Афанасьев Д.А., Сериков Т.М., Аманжолова Г.С. Получение пленок титана методом магнетронного распыления для син- теза пористых пленок диоксида титана ............. 48
ниттік көтергіш қондырғысының «скип- бағыттаушы құрылғы» жүйесін зерттеу ........... 57
Айкеева А.А., Жаутиков Б.А., Роговая К.С., Жаутиков Ф.Б., Мухтарова П.А. Исследова- ние системы «скип-направляющее устройст- во» электромагнитной подъемной установки ... 57
Карабекова Д.Ж. «Адам–киім» жүйесінде портативті электронды құрылғылар үшін пьезоэлектрлікті электр
энергиясы көзі
ретінде пайдалану ............................................... 62
Молнар А.А., Куритник И.П., Герасимов В.В., Карабекова Д.Ж. Пьезоэлектричество как ис- точник электроэнергии для портативных элек- тронных устройств в системе «человек– одежда» ................................................................ 62
Содержание Серия «Физика». № 4(80)/2015
3
МЕТОДИКА ПРЕПОДАВАНИЯ ФИЗИКИ Карбозова А.К., Маханов К.М., Мустафина А.М., Маукебаева М.А. NXT-технологиясын мектепте робототехника негіздерін меңгеру үшін қолдану ................................................................ 66
Карбозова А.К., Маханов К.М., Мустафина А.М., Маукебаева М.А. Применение NXT-технологий в преподавании школьного курса физики ......... 66 АВТОРЛАР ТУРАЛЫ МƏЛІМЕТТЕР ........... 73 СВЕДЕНИЯ ОБ АВТОРАХ .............................. 73 2015 жылғы «Қарағанды университетінің ха- баршысында» жарияланған мақалалардың көрсеткіші. «Физика» сериясы .......................... 75
Указатель статей, опубликованных в «Вест- нике Карагандинского университета» в 2015 году. Серия «Физика» ......................................... 75
4 Вестник Карагандинского университета КОНДЕНСАЦИЯЛАНҒАН КҮЙДІҢ ФИЗИКАСЫ ФИЗИКА КОНДЕНСИРОВАННОГО СОСТОЯНИЯ UDC 621.383: 537.311.33 L.V.Chirkova 1 , K.T.Ermaganbetov 1 , E.T.Arinova 2
Ye.A.Buketov Karaganda State University; 2 Gimnasium № 1, Karaganda (E-mail: ket3853@mail.ru) Electronic mechanisms of instability in semiconductor structures Semiconductor crystals are difficult dynamic systems in which emergence of electric not stability is possible (failure of current, spontaneous fluctuations of current or tension, switching and a hysteresis in volt — the ampere characteristic, etc.). This instability meets in many materials, in different temperature areas and at various levels of excitement. In article instability of some branches of volts — the ampere characteristic of semiconductor devices — existence of the negative differential conductivity (NDC) of S-and N-of types is considered. It is shown that NDC are connected with not stability operated by tension or current. The main electronic mechanisms resulting in negative differential conductivity are considered. Key words: a semiconductor crystal, instability, negative differential conductivity, volt — the ampere charac- teristic.
The semiconductor which is under strong external influence finds essential nonlinear behavior: emergence of considerable deviations from a linear ratio between current and tension (violation of the law of Ohm), emer- gence of not stability is possible (interruptions of current, fluctuation and a gallop of current switching and a hysteresis in the volt-ampere characteristic, etc.). Big electric and magnetic fields, high level of current injection and light excitement can be external influences. Listed above instability meet in many materials, in different temperature areas, at various levels of excitement [1–3]. Often they have negative impact on characteristics of semiconductor devices, but in cer- tain cases they are used for the special purposes. For example, for generation of microwave radiation in the range from 0,1 to 1000 GHz, for strengthening in the gigahertz range of frequencies i.e. where ordinary tran- sistors can't be used [3, 4]. It is known that the volt-ampere characteristic of the I(U) semiconductor which is measured in station- ary conditions, most fully reflects nature of transfer of carriers of a charge. This characteristic depends on microscopic properties of volume of the semiconductor. These properties define dependence of density of current of j on local electric field E and from parameters of contacts. It is often possible to be limited to a local static scalar product of j(Е). If dependence of j(Е) has area of the negative differential conductivity (NDC)
0,
dj dE (1) that is, if density of current decreases with growth of electric field (or increases at reduction of a field), re- spectively stationary states will be unstable. In this case the size of current will depend on other chain which part even in the absence of external load resistance resistive and jet elements surely are (resistance and in- ductance of wires, mutual inductance and capacity). Depending on what of letters of the Latin alphabet — N or S — reminds the form of the characteristic of j(Е), distinguish NDC N-or S-of type. The characteristic type of the specified characteristics is given in figure 1. Electronic mechanisms of instability… Серия «Физика». № 4(80)/2015 5
The tunnel diode and Gunn diode belong to devices with NDC N-of type. The avalanche-transit (ATD) diode, multilayered devices such as thyristor, as p-n-p-n-and p-i-n-diodes, thermal and electro thermal switches, switches on elements Ovshinsky ovonic memory in the type NDC S-type. NDC N-and S-of types are connected with instability which voltage or current. In case of density NDC N-of current is single valued function of a electric field. Thus it is necessary to consider that the electric field is ambiguously: the E(j) function in a certain area of values j has treble coursing [4]. The case of NDC S-of type is complementary, i.e. E and j are interchanged the position. NDC N-and S-of types are connected with instability which voltage or current. In case of density NDC N-of current is single valued function of a elec- tric field. Thus it is necessary to consider that the electric field is ambiguously: the E(j) function in a certain area of values j has treble coursing [4, 5]. The case of NDC S-of type is complementary, i.e. E and j are interchanged the position. Also combinations of NDC N-and S-of types are possible: they can replace each other on the static characteristic at increase of electric field; perhaps eventually transformation of the characteristic from S-figurative in N-figurative; at last, the static characteristic can have more difficult form, with a complex shapes of current and tension. Also combinations of NDC N-and S-of types are possible: they can replace each other on the static characteristic at increase of electric field; perhaps eventually transformation of the characteristic from S-figurative in N-figurative; at last, the static characteristic can have more difficult form, with a complex shapes of current and tension. The volt — the ampere characteristic of the semiconductor can be calculated, using dependence of j from E, having carried out integration of density of current of j on the flow area s and a field E on testing length:
; I jds (2)
0 .
l U E z dz (3) In distinction from dependence of j(Е) which is defined by properties of volume of semiconductor ma- terial, volt — ampere characteristic of I(U) depends also on geometry of a sample, boundary conditions and contacts. However, if the steady state spatially is uniform and resistance of contacts can be neglected in comparison with semiconductor volume resistance, dependences of j(E) and I(U) are similar, i.e. can be re- duced to one curve by change of scale. As a rule, NDC connect with instability of a uniform steady state in relation to spatial fluctuations of electric field and concentration of carriers that leads to spatially non-uniform distributions of density of cur- rent or field [1, 4]. Thus the usual thermodynamic explanation of such spatial structures is unsuitable as NDC comes when the system is taken far away from a condition of thermal balance.
The example of the elementary chain with the element having NDC is given in figure 2. NDC – an ele- ment is included consistently with the load resistor R and a source of tension. b L.V.Chirkova, K.T.Ermaganbetov, E.T.A 6 The load line of an element ha Crossing of a load straight lin Working points at a negative differe of a spatial charge (formation of no emergence of the oscillations determ 1 — w
Figure 3. Dep By the form characteristics of conclusions. In case of N-or S-of the acteristic of I (U) and the load line parallel to itself and points of interse tangent to the characteristic, there is a point of intersection — bifurcatio with loss or change of stability of br In the case under consideration another is unstable though in both ca Negative differential conductio sition, and the phenomena in volum conductor devices (tunnel diodes, d p-n-p-n-the diode NDC mechanisms Operation of the tunnel diode sidered by authors in [6]. In p-n-p-n-the diode S-the figu ture. Many p-n-p-n-options of stru known. The elementary four-layer st consecutive p-n-of transitions and tw
When giving on Shokley diod Extreme p-n-transitions are displace Arinova
Вестник Караг as an appearance (fig. 3)
. U U I R e about BAX of the device defines a working p ential indicator of dI/dU < 0 often are unstable in on-uniform distribution of a field or density of cu mined by an external chain.
working point, 2 — a load line on a direct current endence of current on tension on an element with NDC I (U) and to position of the load line can be mad e figurative characteristic of I (U) three points of are possible. At change of the enclosed tension t ection move according to the characteristic of I (U s a merge of two points of intersection, and at furt on of the elementary type. Generally bifurcation ranches of various decisions. n it means that one of two merging points of in ases the differential indicator is negative. on is shown via mechanisms which are defined b me of the semiconductor. These mechanisms are iodes Gunn, avalanche-transit diode, etc.). So, in s are caused by the phenomena in p-n-transition. and the mechanism of emergence of type ODP N urative characteristic of I (U) is realized. This dev ucture, including a thyristor or the operated sem tructure (a dynistor, a diode thyristor or Shockley wo ohmic — the anode and the cathode (fig. 4).
Figure 4. Structure of the Shokley diode de of direct tension it can be in two steady stat ed thus in the direct direction (optical transitions гандинского университета (4)
point on a direct current. relation to heterogeneity urrent) and in relation to C de the following general f intersection of the char- the load line is displaced U). When the load line is ther change there will be ns are closely connected ntersection is steady, and by p-n-properties of tran- e realized in many semi- n the tunnel diode and in
vice has four-layer struc- miconductor rectifier are y diode) consists of three tes: closed and opened. Серия «Физика». № 4(80)/2015 is displaced in the opposite direction a site of a direct branch BAX betwe of switching is a point to CVC in w reaches the maximum value. The impedance site of a direct branch CV characteristic there is transitional a s
Figure 5. BA The most part of external dire branch BAX of the Shokley diode i BAX). With increase in the anode te emitter transitions increases. The el are involved by a field of collector t ture is interfered by a small potentia ing appeared in a potential hole of potential barrier of the right emitter The injected holes diffuse to co p-base. Their further advance on st emitter transition now. Thus, in p-to increase in injection of electrons fro Thus, when giving on p-n-p-n- ductivity (the small size of current (optical) transitions direct shift, and distribution of potential in the devic direct, i.e. unlocking. S-the figurativ Lead 4 main mechanisms t nonmonotonic dependence of densit in some range E can be caused by n of electrons or temperatures of a latt There are some types of nonlin ing on border Brillouin zone. Gan strengthening of the Microwave rad intervalley electron transfer from a of strong electric field (Е > 3 Sq/s). tures, connections ,
Y A B in partic ture of GaAs is given in figure 6.
Electronic m n (collector transition). The closed condition of a en a zero point and a point of switching (fig. 5, s which differential resistance is equal to zero, an open condition of a dynistor corresponds to a VC (fig. 5, site 2 to CVC). Between sites 1 and 2 site corresponding to an unstable condition of stru
AX and power charts of Shokley diode (diode thyristor) ect tension falls on collector transition therefore is similar to the return branch BAX of the rectifi ension enclosed between the anode and the catho lectrons injected from emitter n-in p-base diffus transition and get to n-base (fig. 5). Further advan al barrier of the right emitter transition. Therefor n-of base, forms an excess negative charge whi transition, causes increase in injection of holes fr ollector transition, are involved by a field of colle tructure of the diode is interfered by a small pot o base there is an accumulation of an excess positi m emitter n-. -the diode as whole direct tension two states are is I) and with high conductivity (big size I). In t d on average (collector) transition — blanking o ce is nonmonotonic dependence and such that on ve characteristic of the I (V) is as a result formed. to emergence of NDC determined by prope ty of current of j on a field E leading to a negativ onlinearity of mobility, concentration of carriers tice [3, 4]. nearity of mobility or drift instability: Gann, and in nn nonlinearity of mobility is used in Gunn di diation frequencies over 1 GHz. NDC mechanism state with high mobility in a state with low mob As material for production of semiconductor de cular, GaAs gallium arsenide serve. The schemat mechanisms of instability… 7 a dynistor corresponds to ite 1 to CVC). The point nd tension on a dynistor a low-voltage and low- 2 of volts — the ampere ucture. ) the first site of a direct fier diode (fig. 5, a site 1 ode direct tension and on se to collector transition, nce of electrons on struc- e, part of electrons, hav- ch, lowering height of a rom emitter p-in n-base. ector transition and get to tential barrier of the left ive charge that promotes possible: with low con- the first case on extreme ffset. In the second case all three transitions shift erties of volume. The e differential condactans of a charge, temperature nstability, Bragg scatter- iode for generation and m in this case is based on bility under the influence evices with similar struc- tic image of zonal struc-
L.V.Chirkova, K.T.Ermaganbetov, E.T.Arinova 8 Вестник Карагандинского университета Figure 6. Zonal structure of a zone of conductivity of GaAs In weaker electric field almost all electrons are in the main minimum where the effective mass of m * is small (
* 0 0,07 , m m 0 m -the mass of an electron). Therefore, their mobility is great. At increase in a field E electrons "are warmed" and gain the energy sufficient for transition to the side valley with higher energy in a minimum, but with a bigger effective weight and, therefore, with lower mobility. In process of transition of the increasing number of electrons their average mobility sharply decreases, the current density determined by expression ( )
j en E E
also decreases. Negative differential mobility results. When the majority of elec- trons appears in the side valley, j will start increasing again. Thus the characteristic with type NDC N-turns out. Other NDC mechanisms connected with nonlinearity of mobility are caused by anisotropy of equivalent side valleys. Other NDC mechanisms connected with nonlinearity of mobility are caused by anisotropy of equivalent side valleys. For example, Erlbah instability in Ge is caused by not diagonal elements of a tensor of differen- tial conductivity Other NDC mechanisms connected with nonlinearity of mobility are caused by anisotropy of equivalent side valleys. For example, Erlbah instability in Ge is caused by not diagonal elements of a ten- sor of differential conductivity / . dj dE Let there is a case of two equivalent side valleys 1 and 2 which axes of anisotropy have the different di- rections. Electric field E is enclosed in the direction x, symmetric concerning these two valleys. Then j cur- rent will also be directed lengthways x. Further we will assume that the field slightly deviates the direction x so effective weight for conductivity in the valley 1 will exceed that in the valley 2. Speed with which elec- trons absorb energy of electric field (speed of a warming up of electrons) is inversely proportional to effec- tive weight for conductivity. Therefore in the valley the 2nd electrons will be warmed more strongly, than in the valley 1. By means of intervalley dispersion electrons will pass from hotter valley (the valley 2) in colder. (the valley 1) and in the valley of 1 electrons will become more, than in the valley 2. Reduction of filling of the valley with higher mobility will lead to a negative contribution to current in the direction of y that can result in cross negative conductivity (type NDC N). Generative recombinational instability (instability GR) or instability caused by nonlinearity of concen- tration of carriers of a charge are characterized by nonlinear dependence of concentration of carriers in a steady state from a field E. It results in nonmonotonic dependence of density of current on a field with NDC N-or S-of types. Such dependence is caused by redistribution of electrons between a zone of conductivity and the connected states in the course of a warming up of electronic gas. GR — coefficients usually depend on electric field. Especially strong dependence takes place for in- crease in section of capture of carriers by the impurity centers with growth of a field and for processes of shock ionization of carriers from impurity levels. Capture of electrons on deep impurity levels demands overcoming of a Coulomb potential barrier by them. Therefore the coefficient of capture increases with a field E. and concentration of free carriers decreas- es with growth of a field, dn/dE < 0, and differential conductivity equal
/ dj dE e n Edn dE
can be- come negative. In stronger fields the coefficient of ionization increases, and concentration of carriers starts growing with a field. It results in positive differential conductivity. So there is N-figurative j(Е) the charac- teristic. Also shock ionization of carriers from impurity levels (small donors or deep traps) or ionization (avalanche breakdown) can lead to ODP. If the free carrier of current received sufficient kinetic energy in electric field, it can give this energy at collision to the connected carrier. The last then gets to a conductivity zone (electron) or to a valent zone (hole). As a result there is one more free carrier which can make one more act of shock ionization in turn. The fast increase in concentration of free carriers is as a result observed. In the electric fields exceeding threshold values for, necessary for a warming up of carriers to the energy suffi-
Серия «Физика». № 4(80)/2015 cient for ionization, the coefficient o tain conditions such processes can le The phenomena in volume of and flying diode and p-i-n-of the dio P-i-n-the diode consists of a la of p-and n-of types (fig. 7). The ma If n-a layer of the diode to connect to to the center with own conductivity nation of acceptor type with the big capture for electrons. Besides, we w pletely occupied with electrons. Th barrier»: the most part of the injecte p-i-. The injected electrons thus will Figure 7. Th Resultant current of electrons i centration of the injected electrons a the high level of injection, on each electrons pass i-a layer. At rather hi mately identical. In this case current Thus, at this size of the enclose ized by the small size of current, th created by carriers of one sign and this case the recombination centers termediate states there is NDC. Avalanche-transit diodes have duction of carriers of current at the nents.
Fi When total tension exceeds pen couples generated in narrow part of ionization are divided by a field. Th ture until these carriers don't go beyo If to impose an alternating vo ductance if the part of carriers drift phase of current on a corner π conce Increase of tension all the time rent growth. It testifies that for this tions the condition of a negative con Electronic m of shock ionization sharply increases with growth ead to type NDC S [7, 8]. the semiconductor leading to NDC are the corne ode.
ayer of the not alloyed semiconductor material co ajority of switching microwave radiation — diod o minus, and p-a layer — to tension source plus, e (i-a layer). Let's say that i-a layer contains the de cross section of capture for holes and considerab will assume that in a condition of thermal balanc en at the low level of injection for holes there w ed holes will be taken the recombination centers l freely pass i-a layer.
he diode with p-i-n-structure (and) and its power chart is limited to the volume charge formed by the in and holes exceeds concentration of the centers of center of a recombination there is a taken hole, igh level of injection of concentration of electron t is transferred by quasineutral electronic hole pla ed tension two steady stationary states are possib hus the recombination centers are occupied with is limited by a spatial charge. The second is a s are filled with holes, and current is caused by th structure p n n (fig. 8). They work in the m e return shift of electric transition having consta
gure 8. Structure of avalanche-transit diode netrative, shock ionization — avalanche breakdow f p-n-of transition where intensity of electric fiel he current caused by the movement of new carrie ond transition p-n-. ltage on continuous return shift, emergence of a ts against variation electric field is possible. It co erning tension. e will be followed by reduction of current, and red s frequency of an alternating voltage during the nductance is satisfied. mechanisms of instability… 9 h of a field E. Under cer- erstone of the avalanche oncluded between layers des has similar structure. electrons will be injected eep centers of a recombi- ble the smaller section of e these centers are com- will be «a recombination near injecting transition njected electrons. If con- f a recombination, i.e. at and excess holes just as ns and holes are approxi- asma.
le. The first is character- electrons, and current is state with big current. In he injected plasma. In in- mode of avalanche repro- ant and variable compo- wn begins. Electron-hole ld is sufficient for shock ers passes through struc- a negative variable con- orresponds to delay of a duction of tension – cur- entire period of fluctua-
L.V.Chirkova, K.T.Ermaganbetov, E.T.Arinova 10
Вестник Карагандинского университета At reduction in the frequency of an alternating voltage current will lag behind tension on a corner, smaller π as time of flight and a lag effect of shock ionization don't change. When with reduction in the fre- quency of an alternating voltage phase shift between current and tension makes π/2, conditions of a negative conductance will be satisfied only throughout a half of the period, alternating through everyone a quarter of the period with conditions of positive differential resistance. In this limit case on average for the period the avalanche and flying diode won't possess a negative conductance. Thus, in case of avalanche and flying di- odes the combination of the effects connected with shock ionization and final time of flight of carriers works. All mechanisms of emergence of ODP considered in article are purely electronic, based on violation of balance in system of carriers by electric field. At the same time it should be noted that there is rather big va- riety electro thermal, the ODP acoustoelectric mechanisms, mechanisms connected with instability of the magnetized plasma, etc. which consideration is beyond this article.
1 Шёлль Э. Самоорганизация в полупроводниках. Неравновесные фазовые переходы в полупроводниках, обусловлен- ные генерационно-рекомбинационными процессами / Шёлль Э. — М.: Мир, 1991. 2 Аскеров Б.М. Электронные явления переноса в полупроводниках. — М.: Наука, 1985. 3 Бонч-Бруевич В.Л., Звягин И.П., Миронов А.Г. Доменная электрическая неустойчивость в полупроводниках. — М.: Наука, 1972. 4 Ансельм А.И. Введение в теорию полупроводников. — Л.: Наука, 1978. 5 Пасынков В.В., Чиркин Л.К. Полупроводниковые приборы: Учебник для вузов. — М.: Высш. шк., 1987. 6 Chirkova L., Ermaganbetov K.T., Arinova E.T. Instability in the semiconductor structures as self-organization manifestation // Education and science without borders. — 2013. — Vol. 4. — No 7 (1/2013). — P. 132–134. 7 Пожела Ю.К. Плазма и токовые неустойчивости в полупроводниках. — М.: Наука, 1977. 8 Zhanabaev Z.Zh. Information Properties of self-organizing Systems // NewsNat.Acad. of Science RK. — 1996. — № 5. — P. 14–19.
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